ผศ.ดร.ภ.พึ่งบุญ ปานศิลา

Thin film processing; Semiconductor thin film; Plasma processing; Atomic layer deposition; ALD; Sputtering process; Green energy

1. Comparison of H2O2 and H2O oxidations on TDMAT absorbed on silicon (100) surface during reaction step of ALD–TiO2 process: A DFT study T Promjun, M Phothisonothai, W Sriboon, S Sukprasong, PP Pansila, Materials Today Communications 38, 108125 (2024).

2. Kinetic study on initial surface reaction of titanium dioxide growth using tetrakis (dimethylamino) titanium and water in atomic layer deposition process: Density functional theory calculation,T Promjun, T Rattana, PP Pansila,Chemical Physics 562, 111653 (2022).

3. Kinetic Study of Tetrakis (Dimethylamido) Titanium and Titanium Tetrachloride Adsorption on a Silicon Surface in Atomic Layer Deposition: A DFT Calculation, T Promjun, T Rattana, P Pungboon Pansila, Integrated Ferroelectrics 225 (1), 93-103 (2022)

4. The Characteristic of TMG adsorption on the Si (100)(2× 1) surface in atomic layer deposition (ALD): Computational prediction of Si9H12O2GaCH3 structure, PP Pansila, S Sukhasena, P Chunpang, NU. International Journal of Science 16 (2), 1-10 (2019).

5. Computational Study of the Adsorption Step of Aluminum Chloride Gas in the Atomic Layer Deposition Process of Aluminum Oxide Thin Film, P Nantajul, J Chompookeaw, T Promjun, P Chunpang, Y Uraichuen,Burapha Science Journal, 1802-1810 (2018).

6. Computational prediction of trimethylgallium adsorption on Si (100)(2× 1) in atomic layer deposition, S Sukhasena, PP Pansila, Key Engineering Materials 759, 43-47,(2018).

7. Room-temperature atomic layer deposition of ZrO2 using tetrakis (ethylmethylamino) zirconium and plasma-excited humidified argon, K Kanomata, K Tokoro, T Imai, P Pansila, M Miura, B Ahmmad, S Kubota,, K Hirahara, F Hirose, Applied Surface Science 387, 497-502 (2016).

8. RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor, K Kanomata, K Tokoro, T Imai, PP Pansila, M Miura, B Ahmmad, S Kubota, Kazuhiro Hirahara, Fumihiko Hirose, Electrochemical Society Meeting Abstracts 229, 991-991, (2016).

9. Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3, P Pansila, K Kanomata, M Miura, B Ahmmad, S Kubota, F Hirose, Applied Surface Science 357, 1920-1927 (2015).

10. Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source, PP Pansila, K Kanomata, B Ahammad, S Kubota, F Hirose, IEICE Technical Report; IEICE Tech. Rep. 115 (329), 69-72 (2015).

11. Nitrogen adsorption of Si (100) surface by plasma excited ammonia, PP Pansila, K Kanomata, B Ahmmad, S Kubota, F Hirose, IEICE Transactions on Electronics 98 (5), 395-401 (2015)

12. Room temperature atomic layer deposition of gallium oxide investigated by IR absorption spectroscopy, PP Pansila, K Kanomata, B Ahmmad, S Kubota, F Hirose, IEICE Transactions on Electronics 98 (5), 382-389 (2015).

13. RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor, K Kanomata, PP Pansila, H Ohba, B Ahmmad, S Kubota, K Hirahara, F Hirose, Electrochemical Society Meeting Abstracts 227, 2274-2274 (2015).

14. Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen, K Kanomata, H Ohba, PP Pansila, BA Arima, S Kubota, K Hirahara, F. Hirse, IEICE Technical Report; IEICE Tech. Rep. 115 (5) (2015).

15. Room-Temperature Atomic Layer Deposition of Al2O3 with Remote-Plasma Source Investigated by IR Absorption Spectroscopy, K Kanomata, PP Pansila, H Ohba, BA Arima, S Kubota, K. Hirahara, F. Hirose, IEICE Trans. Electron 98, 1-7 (2015)

16. Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis (ethylmethylamino) hafnium and remote plasma-excited oxidizing agentsม K Kanomata, H Ohba, P Pungboon Pansila, B Ahmmad, S Kubota, K. Hirahara, F. Hirose, Journal of Vacuum Science & Technology A 33 (1) (2015)

17. Kinetics and mechanism of adsorptive removal of copper from aqueous solution with poly (vinyl alcohol) hydrogel, T Jamnongkan, K Kantarot, K Niemtang, PP Pansila, A Wattanakornsiri, Transactions of Nonferrous Metals Society of China 24 (10), 3386-3393 (2014).

18. RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma, PP Pansila, K Kanomata, BA Arima, S Kubota, F Hirose, IEICE Technical Report; IEICE Tech. Rep. 114 (202), 59-64, (2014).

19. Infrared study on room-temperature atomic layer deposition of TiO2 using tetrakis (dimethylamino) titanium and remote-plasma-excited water vapor, K Kanomata, P Pansila, B Ahmmad, S Kubota, K Hirahara, F Hirose, Applied Surface Science 308, 328-332 (2014)

20. Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source, K Kanomata, H Ohba, PP Pansila, T Suzuki, B Ahmmad, S Kubota, K Hirahara, F Hirose, Electrochemical Society Meeting Abstracts 225, 1392-1392 (2014).

มองหาผู้ร่วมงานด้าน Semiconductor processing และ Green energy